Destructive Physical Analysis Of Transistors

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Destructive Physical Analysis Of Transistors

The Destructive Physical Analysis (DPA) on one lot of JANTXV2N2222A Transistors (lot date code 9752) has been completed. All devices passed External Visual Examination, Electrical testing, P.I.N.D. and RGA.

Internal Visual Examination revealed one (1) anomalous condition. One (1) device, S/N 466, exhibited one rejectable post wire bond that was placed on the post edge. This is unacceptable per 54019, MIL-STD 750, Method 2072, 4.1.4.4. d, "Bonds on the package post that are not bonded entirely on the flat surface of the post top". This bond and all other bonds within this sample group passed wire bond strength testing.

Three (3) devices passed Scanning Electron Microscope (SEM) Examination, and all five (5) devices passed die shear strength testing.

Overall view of the device as received.

Overall optical view of a typical delidded device showing the die.

Optical view of the post bond on the edge of the post.

SEM of the post bond on the edge of the post.

Detailed SEM of the post bond on the edge of the post.

Bond pull data, ALL devices passed. SN466 was the device shown above.
PH=POST HEAL, DH= DIE HEAL, S= SPAN

Overall SEM micrograph of the transistor chip.

Detailed SEM micrograph of the die wire bond.

Detailed SEM micrograph of an acceptable post wire bond.

Detailed SEM micrograph showing acceptable contact window metallization quality.

Detailed SEM micrograph showing acceptable metallization quality, X direction.

Detailed SEM micrograph showing acceptable metallization, quality Y direction.

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